2023-04-262023-04-261999-12OLIVEIRA, Solemar Silva; SOUZA, Marcio Adriano R.; BORGES, Antonio Newton; OSÓRIO, Francisco A. Pinto. Cyclotron mass of electrons in gaas-algan heterostructures. Brazilian Journal of Physics, São Paulo, v. 29, n.4, p. 675-678, 1999. DOI: 10.1590/S0103-97331999000400011. Disponível em: https://www.scielo.br/j/bjp/a/nvVHf4Lh8W7mzCcCCrds9CF/?lang=en. Acesso em: 24 abr. 2023. 0103-9733e- 1678-4448http://repositorio.bc.ufg.br/handle/ri/22413The quasi-two-dimensional electron cyclotron mass in GaN-AlxGa1xN heterostructures is theoret- ically calculated. The shifting in Landau Levels due to the electron Longitudinal Optical phonon interaction is calculated through the Second Order Improved Wigner Brillouin Perturbation Theory (IWBPT). Experimental results recently obtained for GaN heterojunction are well described by the theory. We have also investigated the e ects of the electronic density on the Cyclotron Resonance frequency.engAcesso AbertoCyclotron mass of electrons in gaas-algan heterostructuresArtigo https://doi.org/10.1590/S0103-97331999000400011