2023-12-132023-12-132008OSÓRIO, F. A. P.; ALMEIDA, R. B. de; BORGES, A. N.; MACHADO, P. C. M. Magnetopolaron effects on the donor states in InP. Microelectronics Journal, Amsterdam, v. 39, n. 3/4, p. 573-575, 2008. DOI: 10.1016/j.mejo.2007.07.035. Disponível em: https://www.sciencedirect.com/science/article/pii/S0026269207001930. Acesso em: 14 set. 2023.0026-2692https://www.sciencedirect.com/science/article/pii/S0026269207001930In this work, we investigate the magnetopolaron effects on the transition energies between the intradonor levels 1s–2p± placed in InP bulk semiconductor. In spite of the InP Frölich electron–longitudinal optical phonon coupling constant (α=0.12) be greater than the GaAs (α=0.07), we employ in the calculation the same theoretical tools successfully applied for GaAs structures, a mix between variational method and perturbation theory. A good agreement between our theoretical results and the available experimental results were observed mainly in the region below the resonance, for magnetic field B⩽25 T.engAcesso RestritoInPElectron–phonon interactionImpurityArtigo10.1016/j.mejo.2007.07.035