Role of Ga presence into the heterojunction of metal oxide semiconductor on the stability and tunability ZnO ceramics

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dc.creatorMiranda, Gabriela Gomes
dc.creatorSilva, Raphael Lucas de Sousa e
dc.creatorBanerjee, Prasun
dc.creatorFranco Júnior, Adolfo
dc.date.accessioned2023-11-01T14:26:52Z
dc.date.available2023-11-01T14:26:52Z
dc.date.issued2020
dc.description.abstractIn this study we investigated the stability and tunability of Zn Ga O 1 x x ceramics obtained by using the pressureless solid state reaction method. Analysis based on XRD data showed that a smaller ionic radius of Ga atom helps to minimize stress in the lattice. Phase pure ceramics have been obtained with relatively good density up to 0.5% of Ga doping. Further doping resulted in a secondary phase of ZnGa O2 4 along the heterojunction with several physical defects. The presence of defect dipole resulted in complex dielectric polarization in the material. The Cole-Cole model of dielectric relaxation fitted well with the dielectric data where as the doped samples exhibited higher dielectric permittivities at lower frequencies. Doping also resulted in bigger semicircles into the Nyquist plots of the impedance data due to the higher grain boundary resistance. The Eg can be tuned to the lower values of the doped samples with respect to the pure ZnO samples. The possible energy conversion applications discussed here in the light of better stability and tunability of the material.
dc.identifier.citationMIRANDA, Gabriela Gomes; SILVA, Raphael Lucas de Sousa e; BANERJEE, Prasun; FRANCO JR., A. Role of Ga presence into the heterojunction of metal oxide semiconductor on the stability and tunability ZnO ceramics. Ceramics International, Amsteram, v. 46, n. 15, p. 23390-23396, 2020. DOI: 10.1016/j.ceramint.2020.06.022. Disponível em: https://www.sciencedirect.com/science/article/pii/S0272884220316680. Acesso em: 4 set. 2023.
dc.identifier.doi10.1016/j.ceramint.2020.06.022
dc.identifier.issn0272-8842
dc.identifier.issne- 1873-3956
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0272884220316680
dc.language.isoeng
dc.publisher.countryHolanda
dc.publisher.departmentInstituto de Física - IF (RMG)
dc.rightsAcesso Restrito
dc.subjectMetal oxide semiconductor
dc.subjectn-typeXRD
dc.subjectBand gap
dc.subjectDielectric
dc.subjectDefect dipole polarization
dc.titleRole of Ga presence into the heterojunction of metal oxide semiconductor on the stability and tunability ZnO ceramics
dc.typeArtigo

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