Magnetopolaron effects on the donor states in InP

Página do item simplificado
dc.creatorOsorio, Francisco Aparecido Pinto
dc.creatorAlmeida, R. B. de
dc.creatorBorges, Antonio Newton
dc.creatorMachado, Paulo César Miranda
dc.date.accessioned2023-12-13T14:22:06Z
dc.date.available2023-12-13T14:22:06Z
dc.date.issued2008
dc.description.abstractIn this work, we investigate the magnetopolaron effects on the transition energies between the intradonor levels 1s–2p± placed in InP bulk semiconductor. In spite of the InP Frölich electron–longitudinal optical phonon coupling constant (α=0.12) be greater than the GaAs (α=0.07), we employ in the calculation the same theoretical tools successfully applied for GaAs structures, a mix between variational method and perturbation theory. A good agreement between our theoretical results and the available experimental results were observed mainly in the region below the resonance, for magnetic field B⩽25 T.
dc.identifier.citationOSÓRIO, F. A. P.; ALMEIDA, R. B. de; BORGES, A. N.; MACHADO, P. C. M. Magnetopolaron effects on the donor states in InP. Microelectronics Journal, Amsterdam, v. 39, n. 3/4, p. 573-575, 2008. DOI: 10.1016/j.mejo.2007.07.035. Disponível em: https://www.sciencedirect.com/science/article/pii/S0026269207001930. Acesso em: 14 set. 2023.
dc.identifier.doi10.1016/j.mejo.2007.07.035
dc.identifier.issn0026-2692
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0026269207001930
dc.language.isoeng
dc.publisher.countryHolanda
dc.publisher.departmentInstituto de Física - IF (RMG)
dc.rightsAcesso Restrito
dc.subjectInP
dc.subjectElectron–phonon interaction
dc.subjectImpurity
dc.titleMagnetopolaron effects on the donor states in InP
dc.typeArtigo

Arquivos

Licença do Pacote

Agora exibindo 1 - 1 de 1
Imagem de Miniatura
Nome:
license.txt
Tamanho:
1.71 KB
Formato:
Item-specific license agreed upon to submission
Descrição:
Baixar

Coleções

IF - Artigos publicados em periódicos