Confinement effect on the intradonor 1s–2p+ transition energies in GaN quantum wells
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In this work, we report a calculation of the 1s–2p+ transition energies of the donor impurity levels in a GaN–AlGaN quantum well (QW) in the presence of an external magnetic field. The impurity level energies are calculated through the variational method and the polaronic contribution is calculated via second order perturbation theory. The band non-parabolicity effects on the binding energies are included in the calculations. We have compared our results with that for GaN-bulk and verified the enhancement of the transition energy due to the electron confinement.
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ALMEIDA, R. B. de; BORGES, A. N.; MACHADO, P. C. M.; OSÓRIO, F. A. P. Confinement effect on the intradonor 1s-2p+ transition energies in GaN quantum wells. Microelectronics Journal, Amsterdam, v. 36, n. 3/6, p. 431-433, 2005. DOI: 10.1016/j.mejo.2005.02.039. Disponível em: https://www.sciencedirect.com/science/article/pii/S0026269205000765. Acesso em: 14 set. 2023.