Stacking-dependent transport properties in few-layers graphene

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dc.creatorLima, Matheus Paes
dc.creatorSousa, José Eduardo Padilha de
dc.creatorPontes, Renato Borges
dc.creatorFazzio, Adalberto
dc.creatorSilva, Antônio José Roque da
dc.date.accessioned2024-07-11T12:53:08Z
dc.date.available2024-07-11T12:53:08Z
dc.date.issued2017
dc.description.abstractBy performing ab initio electronic structure and transport calculations, we investigated the effects of the stacking order (Bernal (AB) and rhombohedral (ABC)) as well as the number of layers, in the electronic structure and charge transport of few-layers graphene (FLG). We observed that for the ABC stack the transport properties are derived from surface states close to the Fermi level connected to dispersive states with an exponential penetration towards the inner layers, whereas for the AB stacking the transport is distributed over all layers. We present a simple model for the resistances as a function of the number of layers which contemplates the different contribution of the surface and inner layers for the transport. However, even if the stackings AB and ABC present completely different electronic and transport properties, both present the same cohesive energies, showing the absence of a thermodynamical preference for a given kind of stacking.
dc.identifier.citationLIMA, Matheus Paes et al. Stacking-dependent transport properties in few-layers graphene. Solid State Communications, Amsterdam, v. 250, p. 70-74, 2017. DOI: 10.1016/j.ssc.2016.11.012. Disponível em: https://www.sciencedirect.com/science/article/pii/S003810981630312X. Acesso em: 9 jul. 2024.
dc.identifier.doi10.1016/j.ssc.2016.11.012
dc.identifier.issn0038-1098
dc.identifier.issne- 1879-2766
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S003810981630312X
dc.language.isoeng
dc.publisher.countryHolanda
dc.publisher.departmentInstituto de Física - IF (RMG)
dc.rightsAcesso Restrito
dc.subjectA. few layers graphene
dc.subjectD. stacking sequence
dc.subjectD. electronic transport properties
dc.subjectE. first-principles calculations
dc.titleStacking-dependent transport properties in few-layers graphene
dc.typeArtigo

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