Near-infrared holographic photorefractive recording under applied electric field in undoped Bi12TiO20 sillenite crystal
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2020
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Direct holographic recording in undoped Bi12TiO20 crystal at 1064 nm is investigated aiming the characterization
of diffraction efficiency under action of applied dc electric field (E0). An enhancement of 12-fold in the
diffraction efficiency was revealed when E0 increased from 0.0 to 4.2 kV/cm. The theoretical dependence of the
diffraction efficiency and the holographic erasure time upon E0 was investigated using the standard model of
Kukhtarev for photorefractivity and the results showed a good experimental data fitting in both cases, allowing
the computation of the effective trap concentration (ND)eff ≈ 5.62 × 1015 cm− 3 which is responsible by the
recording mechanism into the crystal sample. In particular, the theoretical-experimental investigation using the
holographic erasure time also allowed to determine others relevant parameters for Bi12TiO20 such as the
diffusion transport length LD, the Maxwell relaxation time τM, and the quantum efficiency Φ that can explain the
relatively slow dynamics of photorefractive recording and erasure in near-infrared region. The type of charge
carrier involved in the recording mechanism in the near-infrared region is also discussed.
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Diffraction, Holographic gratings, Holographic recording, Photorefractive effect, Photorefractive materials
Citação
MOURA, André L. et al. Near-infrared holographic photorefractive recording under applied electric field in undoped Bi12TiO20 sillenite crystal. Optical Materials, Amsterdam, v. 108, e110398, 2020. DOI: 10.1016/j.optmat.2020.110398. Disponível em: https://www.sciencedirect.com/science/article/pii/S0925346720307394. Acesso em: 9 nov. 2023.