Effects of confinement on shallow impurities in GaAs-Ga1-xA1xAs quantum dots

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dc.creatorOsorio, Francisco Aparecido Pinto
dc.creatorHipĆ³lito, Oscar
dc.creatorPeeters, Francois M.
dc.date.accessioned2023-12-13T15:30:10Z
dc.date.available2023-12-13T15:30:10Z
dc.date.issued1992
dc.description.abstractThe ground state energy of a shallow impurity placed in the center of a circular quantum dot is studied. The effects of the strength of the confinement potential and a perpendicular magnetic field are investigated theoretically.
dc.identifier.citationOSƓRIO, Francisco A. P.; HIPƓLITO, Oscar; PEETERS, Francois M. Effects of confinement on shallow impurities in GaAs-Ga 1?xA1xAs quantum dots. MRS Proceedings Library, Berlin, v. 281, p. 79-84, 1992. DOI: 10.1557/PROC-281-79. Disponƭvel em: https://link.springer.com/article/10.1557/PROC-281-79. Acesso em: 14 set. 2023.
dc.identifier.doi10.1557/PROC-281-79
dc.identifier.issne- 1946-4274
dc.identifier.urihttps://link.springer.com/article/10.1557/PROC-281-79
dc.language.isoeng
dc.publisher.countryAlemanha
dc.publisher.departmentInstituto de FĆ­sica - IF (RMG)
dc.rightsAcesso Restrito
dc.titleEffects of confinement on shallow impurities in GaAs-Ga1-xA1xAs quantum dots
dc.typeArtigo

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