Effects of confinement on shallow impurities in GaAs-Ga1-xA1xAs quantum dots

dc.creator	Osorio, Francisco Aparecido Pinto
dc.creator	Hipólito, Oscar
dc.creator	Peeters, Francois M.
dc.date.accessioned	2023-12-13T15:30:10Z
dc.date.available	2023-12-13T15:30:10Z
dc.date.issued	1992
dc.description.abstract	The ground state energy of a shallow impurity placed in the center of a circular quantum dot is studied. The effects of the strength of the confinement potential and a perpendicular magnetic field are investigated theoretically.
dc.identifier.citation	OSÓRIO, Francisco A. P.; HIPÓLITO, Oscar; PEETERS, Francois M. Effects of confinement on shallow impurities in GaAs-Ga 1?xA1xAs quantum dots. MRS Proceedings Library, Berlin, v. 281, p. 79-84, 1992. DOI: 10.1557/PROC-281-79. Disponível em: https://link.springer.com/article/10.1557/PROC-281-79. Acesso em: 14 set. 2023.
dc.identifier.doi	10.1557/PROC-281-79
dc.identifier.issn	e- 1946-4274
dc.identifier.uri	https://link.springer.com/article/10.1557/PROC-281-79
dc.language.iso	eng
dc.publisher.country	Alemanha
dc.publisher.department	Instituto de Física - IF (RMG)
dc.rights	Acesso Restrito
dc.title	Effects of confinement on shallow impurities in GaAs-Ga1-xA1xAs quantum dots
dc.type	Artigo

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