Raman spectroscopy study of Ga-doped ZnO ceramics: an estimative of the structural disorder degree
Nenhuma Miniatura disponível
Data
2021
Título da Revista
ISSN da Revista
Título de Volume
Editor
Resumo
The structural disorder degree of Ga-doped ZnO (Zn1−𝑥Ga𝑥O, with x=0.005, 0.01, 0.02, and 0.03) ceramics was investigated by means of Raman spectroscopy analyzes at room temperature. The Raman spectra for Gadoped ZnO samples exhibits both activated Raman modes for wurtzite and spinel structures. The asymmetry
parameter, line-width, and Raman shift could be fitted to the Breit-Wagner-Fano (BWF) function and the
structural disorder degree in the wurtzite structure were analyzed by spatial phonon confinement model (PCM).
For Raman E
high
2 mode, the correlation length, L and defect concentration, N were found to be 2.72, 2.62,
2.56, and 2.41 nm and 1.19 × 1019
, 1.33 × 1019
, 1.21 × 1019, and 1.70 × 1019 cm−3 for x=0.005, 0.01, 0.02, and 0.03
samples, respectively. Additional Raman modes were detected in Ga-doped ZnO (𝑥 ≥ 0.01) spectra that could
be attributed to ZnGa2𝑂4
spinel structure. This is an indication that the solubility limit of Ga in ZnO ceramics
is certainly less than 1 mol at% which was not possible to be detected by means of x ray diffraction (XRD)
experiments.
Descrição
Palavras-chave
ZnO ceramicsGa-doped zn, OBreit-Wagner-Fano model (BWF), Phonon confinement model (PCM), Oxygen vacancy concentration, Strain
Citação
MIRANDA, Gabriela Gomes et al. Raman spectroscopy study of Ga-doped ZnO ceramics: an estimative of the structural disorder degree. Physica B: condensed matter, Amsterdam, v. 606, e412726, 2021. DOI: 10.1016/j.physb.2020.412726. Disponível em: https://www.sciencedirect.com/science/article/pii/S0921452620307055.Acesso em: 4 set. 2023.