Optical band-gap and dielectric behavior in Ho – doped ZnO nanoparticles

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2016

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The optical band-gap and dielectric properties of Zn Ho 1−x xOδ nanoparticulate powders with x¼0.0, 0.005, 0.0075, 0.01, and 0.015 prepared by combustion reaction (CR) method were investigated at room temperature. Both optical band-gap, Eg, and dielectric constant, ε′, values increased with increasing Ho doping concentration; being ∼3.234 and ∼3.268 eV, and ∼37 and ∼50 for x¼0 and 0.015, respectively at room temperature. The dielectric behavior was described by the Cole–Cole model (Cole and Cole, 1941) [22] and the results were discussed in terms of defects such as oxygen vacancies VO or/and interstitial oxygen O present in Ho – doped ZnO nanoparticles, introduced during the sample preparation.

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Zinc oxide, Ho-doped, ZnO Dielectric constant, Dielectric constant, Combustion reaction method

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FRANCO JR., A.; PESSONI, H. V. Optical band-gap and dielectric behavior in Ho - doped ZnO nanoparticles. Materials Letters, Amsterdam, v. 180, p. 305-308, 2016. DOI: 10.1016/j.matlet.2016.04.170. Disponível em: https://www.sciencedirect.com/science/article/pii/S0167577X1630667X. Acesso em: 4 set. 2023.