Colossal permittivity with ultralow dielectric loss in In + Ta co-doped rutile TiO2
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2017
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Colossal permittivity (CP) materials have many important applications in electronics but their development has generally been hindered due to the difficulty in achieving a relatively low dielectric loss. In this work, we report an In + Ta co-doped TiO2 material system that manifests high dielectric permittivity and low dielectric loss based on the electron-pinned defect-dipole design. The dielectric loss can be reduced down to e.g. 0.002 at 1 kHz, giving high performance, low temperature dependent dielectric properties i.e. εr > 104 with tan δ < 0.02 in a broad temperature range of 50–400 K. Density functional theory calculations coupled with the defect analysis uncover that electron-pinned defect dipoles (EPDDs), in the form of highly stable triangle-diamond and/or triangle-linear dopant defect clusters with well-defined relative positions for Ti reduction, are also present in the host material for the CP observed. Such a high-performance dielectric material would thus help for practical applications and points to further discovery of promising new materials of this type.
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WEN, Dong et al. Colossal permittivity with ultralow dielectric loss in In+Ta co-doped rutile TiO2. Journal of Materials Chemistry A, Cambridge, v. 5, n. 11, p. 5436-5441, 2017. DOI: 10.1039/c6ta08337d. Disponível em: https://pubs.rsc.org/en/content/articlelanding/2017/ta/c6ta08337d. Acesso em: 26 jan. 2024.