Impurity-bound magnetopolaron in GaAs quantum well structures

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We report for the first time a theoretical calculation for the resonant donor-impurity magnetopolaron in GaAs - Ga1−χAlχAs quantum-well structures. The intra-donor ls → 2p+ transition frequencies are calculated as a function of the magnetic field, by taking into account the polaron effects and nonparabolicity of the conduction band. We found a pinning behavior due to interaction with LO phonons as suggested by the experimentalists. Our results for the peak positions of those transitions are in very good agreement with recent experimental data.




OSÓRIO, Francisco A. P.; MAIALLE, Marcelo Z.; HIPÓLITO, Oscar. Impurity bound magnetopolaron in GaAs quantum well structures. Solid State Communications, Amsterdam v. 80, n. 8, p. 567-570, 1991. DOI: 10.1016/0038-1098(91)90152-L. Disponível em: Acesso em: 14 set. 2023.