Impurity-bound magnetopolaron in GaAs quantum well structures

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dc.creatorOsorio, Francisco Aparecido Pinto
dc.creatorMaialle, Marcelo Zoéga
dc.creatorHipólito, Oscar
dc.date.accessioned2023-12-13T14:59:21Z
dc.date.available2023-12-13T14:59:21Z
dc.date.issued1991
dc.description.abstractWe report for the first time a theoretical calculation for the resonant donor-impurity magnetopolaron in GaAs - Ga1−χAlχAs quantum-well structures. The intra-donor ls → 2p+ transition frequencies are calculated as a function of the magnetic field, by taking into account the polaron effects and nonparabolicity of the conduction band. We found a pinning behavior due to interaction with LO phonons as suggested by the experimentalists. Our results for the peak positions of those transitions are in very good agreement with recent experimental data.
dc.identifier.citationOSÓRIO, Francisco A. P.; MAIALLE, Marcelo Z.; HIPÓLITO, Oscar. Impurity bound magnetopolaron in GaAs quantum well structures. Solid State Communications, Amsterdam v. 80, n. 8, p. 567-570, 1991. DOI: 10.1016/0038-1098(91)90152-L. Disponível em: https://www.sciencedirect.com/science/article/pii/003810989190152L. Acesso em: 14 set. 2023.
dc.identifier.doi10.1016/0038-1098(91)90152-L
dc.identifier.issn0038-1098
dc.identifier.issne- 1879-2766
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/003810989190152L
dc.language.isoeng
dc.publisher.countryHolanda
dc.publisher.departmentInstituto de Física - IF (RMG)
dc.rightsAcesso Restrito
dc.titleImpurity-bound magnetopolaron in GaAs quantum well structures
dc.typeArtigo

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