Memory matrix theory of the dc resistivity of a disordered antiferromagnetic metal with an effective composite operator
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2017
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Resumo
We perform the calculation of the dc resistivity as a function
of temperature of the ‘‘strange-metal’’ state that emerges in the
vicinity of a spin-density-wave phase transition in the presence of
weak disorder. This scenario is relevant to the phenomenology of
many important correlated materials, such as, e.g., the pnictides,
the heavy-fermion compounds and the cuprates. To accomplish
this task, we implement the memory-matrix approach that allows
the calculation of the transport coefficients of the model beyond
the quasiparticle paradigm. Our computation is also inspired by
the ϵ = 3 − d expansion in a hot-spot model embedded in
d-space dimensions recently put forth by Sur and Lee (2015), in
which they find a new low-energy non-Fermi liquid fixed point
that is perturbatively accessible near three dimensions. As a consequence, we are able to establish here the temperature and doping
dependence of the electrical resistivity at intermediate temperatures of a two-dimensional disordered antiferromagnetic metallic
model with a composite operator that couples the order-parameter
fluctuations to the entire Fermi surface. We argue that our present theory provides a good basis in order to unify the experimental
transport data, e.g., in the cuprates and the pnictide superconductors, within a wide range of doping regimes.
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Transport properties, Electrical resistivity, Spin-fermion model, High-Tc superconductors
Citação
FREIRE, Hermann. Memory matrix theory of the dc resistivity of a disordered antiferromagnetic metal with an effective composite operator. Annals of Physics, Amsterdam, v. 384, p. 142-154, 2017. DOI: 10.1016/j.aop.2017.07.001. Disponível em: https://www.sciencedirect.com/science/article/pii/S0003491617301902. Acesso em: 18 set. 2023.