Memory matrix theory of the dc resistivity of a disordered antiferromagnetic metal with an effective composite operator
| dc.creator | Silva, Hermann Freire Ferreira Lima e | |
| dc.date.accessioned | 2024-01-17T15:19:17Z | |
| dc.date.available | 2024-01-17T15:19:17Z | |
| dc.date.issued | 2017 | |
| dc.description.abstract | We perform the calculation of the dc resistivity as a function of temperature of the ‘‘strange-metal’’ state that emerges in the vicinity of a spin-density-wave phase transition in the presence of weak disorder. This scenario is relevant to the phenomenology of many important correlated materials, such as, e.g., the pnictides, the heavy-fermion compounds and the cuprates. To accomplish this task, we implement the memory-matrix approach that allows the calculation of the transport coefficients of the model beyond the quasiparticle paradigm. Our computation is also inspired by the ϵ = 3 − d expansion in a hot-spot model embedded in d-space dimensions recently put forth by Sur and Lee (2015), in which they find a new low-energy non-Fermi liquid fixed point that is perturbatively accessible near three dimensions. As a consequence, we are able to establish here the temperature and doping dependence of the electrical resistivity at intermediate temperatures of a two-dimensional disordered antiferromagnetic metallic model with a composite operator that couples the order-parameter fluctuations to the entire Fermi surface. We argue that our present theory provides a good basis in order to unify the experimental transport data, e.g., in the cuprates and the pnictide superconductors, within a wide range of doping regimes. | |
| dc.identifier.citation | FREIRE, Hermann. Memory matrix theory of the dc resistivity of a disordered antiferromagnetic metal with an effective composite operator. Annals of Physics, Amsterdam, v. 384, p. 142-154, 2017. DOI: 10.1016/j.aop.2017.07.001. Disponível em: https://www.sciencedirect.com/science/article/pii/S0003491617301902. Acesso em: 18 set. 2023. | |
| dc.identifier.doi | 10.1016/j.aop.2017.07.001 | |
| dc.identifier.issn | 0003-4916 | |
| dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0003491617301902 | |
| dc.language.iso | eng | |
| dc.publisher.country | Holanda | |
| dc.publisher.department | Instituto de Física - IF (RMG) | |
| dc.rights | Acesso Restrito | |
| dc.subject | Transport properties | |
| dc.subject | Electrical resistivity | |
| dc.subject | Spin-fermion model | |
| dc.subject | High-Tc superconductors | |
| dc.title | Memory matrix theory of the dc resistivity of a disordered antiferromagnetic metal with an effective composite operator | |
| dc.type | Artigo |
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