Electron–optical-phonon interaction effect on the intradonor transition energies in doped GaAs−AlxGa1−xAs quantum wells

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We report a calculation of 1s→2p1 transition energies of a donor impurity magnetopolaron located in GaAs quantum wells in the presence of an external magnetic field. The impurity levels are obtained through a variational method by choosing a Gaussian trial wave function with only one variational parameter. Our theoretical results can account for the experimental data for the center-donor system when the approximation of a single well is used. We also found no evidence for the presence of electron–nonbulk-phonon interaction needed to understand this problem.




OSÓRIO, Francisco A. P..; MAIALLE, Marcelo Z.; HIPÓLITO, Oscar. Electron-optical interaction effect on the intra-donor transitions energies in doped GaAs−AlxGa1−xAs quantum well. Physical Review B: condensed matter and materials physics, College Park, v. 57, n. 3, p. 1644-1648, 1998. DOI: 10.1103/PhysRevB.57.1644. Disponível em: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.57.1644. Acesso em: 14 set. 2023.