Electron–optical-phonon interaction effect on the intradonor transition energies in doped GaAs−AlxGa1−xAs quantum wells

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dc.creatorOsorio, Francisco Aparecido Pinto
dc.creatorMaialle, Marcelo Zoéga
dc.creatorHipólito, Oscar
dc.date.accessioned2023-12-13T14:59:13Z
dc.date.available2023-12-13T14:59:13Z
dc.date.issued1998
dc.description.abstractWe report a calculation of 1s→2p1 transition energies of a donor impurity magnetopolaron located in GaAs quantum wells in the presence of an external magnetic field. The impurity levels are obtained through a variational method by choosing a Gaussian trial wave function with only one variational parameter. Our theoretical results can account for the experimental data for the center-donor system when the approximation of a single well is used. We also found no evidence for the presence of electron–nonbulk-phonon interaction needed to understand this problem.
dc.identifier.citationOSÓRIO, Francisco A. P..; MAIALLE, Marcelo Z.; HIPÓLITO, Oscar. Electron-optical interaction effect on the intra-donor transitions energies in doped GaAs−AlxGa1−xAs quantum well. Physical Review B: condensed matter and materials physics, College Park, v. 57, n. 3, p. 1644-1648, 1998. DOI: 10.1103/PhysRevB.57.1644. Disponível em: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.57.1644. Acesso em: 14 set. 2023.
dc.identifier.doi10.1103/PhysRevB.57.1644
dc.identifier.issne- 2469-9969
dc.identifier.issn2469-9950
dc.identifier.urihttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.57.1644
dc.language.isoeng
dc.publisher.countryEstados Unidos
dc.publisher.departmentInstituto de Física - IF (RMG)
dc.rightsAcesso Restrito
dc.titleElectron–optical-phonon interaction effect on the intradonor transition energies in doped GaAs−AlxGa1−xAs quantum wells
dc.typeArtigo

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