Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures

Osorio, Francisco Aparecido Pinto; Degani, Marcos Henrique; Hipólito, Oscar

Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures

Data

1989

Autores

Osorio, Francisco Aparecido Pinto

Degani, Marcos Henrique

Hipólito, Oscar

Resumo

We calculate the effects of the electron-phonon interaction on the binding energies of an impurity placed in a quantum-well wire of rectangular cross section and finite barrier potential to the confined electrons. The calculations are performed as a function of the size of the wire for different positions of the impurity and for several values of the heights of the barrier potential. The results show that the energies are almost the same in wires with comparable cross-sectional area.

Citação

OSÓRIO, Francisco A. P.; DEGANI, Marcos H.; HIPÓLITO, Oscar. Electron phonon effects on the ground impurity level in quasi-one- dimensional semiconductors heterostructures. Superlattices and Microstructures, Amsterdam, v. 6, n. 1, p. 111-113, 1989. DOI: 10.1016/0749-6036(89)90105-5. Disponível em: https://www.sciencedirect.com/science/article/pii/0749603689901055. Acesso em: 14 set. 2023.