Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures

PƔgina do item simplificado
dc.creatorOsorio, Francisco Aparecido Pinto
dc.creatorDegani, Marcos Henrique
dc.creatorHipĆ³lito, Oscar
dc.date.accessioned2023-12-13T15:23:22Z
dc.date.available2023-12-13T15:23:22Z
dc.date.issued1989
dc.description.abstractWe calculate the effects of the electron-phonon interaction on the binding energies of an impurity placed in a quantum-well wire of rectangular cross section and finite barrier potential to the confined electrons. The calculations are performed as a function of the size of the wire for different positions of the impurity and for several values of the heights of the barrier potential. The results show that the energies are almost the same in wires with comparable cross-sectional area.
dc.identifier.citationOSƓRIO, Francisco A. P.; DEGANI, Marcos H.; HIPƓLITO, Oscar. Electron phonon effects on the ground impurity level in quasi-one- dimensional semiconductors heterostructures. Superlattices and Microstructures, Amsterdam, v. 6, n. 1, p. 111-113, 1989. DOI: 10.1016/0749-6036(89)90105-5. Disponƭvel em: https://www.sciencedirect.com/science/article/pii/0749603689901055. Acesso em: 14 set. 2023.
dc.identifier.doi10.1016/0749-6036(89)90105-5
dc.identifier.issn0749-6036
dc.identifier.issne- 1096-3677
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/0749603689901055
dc.language.isoeng
dc.publisher.countryHolanda
dc.publisher.departmentInstituto de FĆ­sica - IF (RMG)
dc.rightsAcesso Restrito
dc.titleElectron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures
dc.typeArtigo

Arquivos

LicenƧa do Pacote
Agora exibindo 1 - 1 de 1
Nenhuma Miniatura disponĆ­vel
Nome:
license.txt
Tamanho:
1.71 KB
Formato:
Item-specific license agreed upon to submission
DescriĆ§Ć£o:
Baixar

ColeƧƵes

IF - Artigos publicados em periĆ³dicos