The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1−x as quantum dots
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2005
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In the present work, we report a calculation of the electron energy levels (1s,2p−,2p+) and the binding energies of a shallow impurity placed in the center of a circular quantum dot of a GaAs surrounded by AlGaAs in the presence of a uniform magnetic field applied perpendicularly to the plane of the dot. We also present results for the 1s−2p+ transition energy as a function of the magnetic field.
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Quantum dot, Magnetic field, Binding energy
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OSÓRIO, F. A. P.; MARQUES, A. B. A.; MACHADO, P. C. M.; BORGES, A. N. The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlGasAs quantum dots. Microelectronics Journal, Amsterdam, v. 36, n. 3/6, p. 244-246, 2005. DOI: 10.1016/j.mejo.2005.02.013. Disponível em: https://www.sciencedirect.com/science/article/pii/S002626920500025X. Acesso em: 14 set. 2023.