The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1−x as quantum dots

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dc.creatorOsorio, Francisco Aparecido Pinto
dc.creatorMarques, Adriana Brito Aguiar
dc.creatorMachado, Paulo César Miranda
dc.creatorBorges, Antonio Newton
dc.date.accessioned2023-12-13T14:57:08Z
dc.date.available2023-12-13T14:57:08Z
dc.date.issued2005
dc.description.abstractIn the present work, we report a calculation of the electron energy levels (1s,2p−,2p+) and the binding energies of a shallow impurity placed in the center of a circular quantum dot of a GaAs surrounded by AlGaAs in the presence of a uniform magnetic field applied perpendicularly to the plane of the dot. We also present results for the 1s−2p+ transition energy as a function of the magnetic field.
dc.identifier.citationOSÓRIO, F. A. P.; MARQUES, A. B. A.; MACHADO, P. C. M.; BORGES, A. N. The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlGasAs quantum dots. Microelectronics Journal, Amsterdam, v. 36, n. 3/6, p. 244-246, 2005. DOI: 10.1016/j.mejo.2005.02.013. Disponível em: https://www.sciencedirect.com/science/article/pii/S002626920500025X. Acesso em: 14 set. 2023.
dc.identifier.doi10.1016/j.mejo.2005.02.013
dc.identifier.issn0026-2692
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S002626920500025X
dc.language.isoeng
dc.publisher.countryHolanda
dc.publisher.departmentInstituto de Física - IF (RMG)
dc.rightsAcesso Restrito
dc.subjectQuantum dot
dc.subjectMagnetic field
dc.subjectBinding energy
dc.titleThe effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1−x as quantum dots
dc.typeArtigo

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