Investigation of Fe-doped room temperature dilute magnetic ZnO semiconductors
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2019
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Different ceramics sample of Zn Fe 1−x xO (ZFO) series have been sintered by solid state reaction method. Single
phase polycrystalline Fe-doped ZnO sample with hexagonal wurtzite structure has been obtained with x < 0.03
mol. Segregation of Fe and/or its oxides have not been found in the XRD patterns. A weak secondary phase of
ZnFe O2 4 has been detected with x ⩾ 0.03 mol. Presence of Ohmic conductivity has been detected in the dielectric
property analysis and the reasons for this Maxwell-Wagner-Sillars (MWS) relaxation has been explained by the
grain boundary barrier defect (GBBD) process. The obtained shift of diamagnetic behavior of pure ZnO samples
to para-magnetic for ZFO samples has been established with the defect and impurity structure. The band gap
energy for ZFO samples has been calculated between 2.85 eV to 3.15 eV . The results indicate the potential use of
Fe doped ZnO ceramics in high frequency device applications.
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Spintronics, Dilute magnetic semiconductor, Optical property, XRD, Dielectric constant, Hysteresis loops
Citação
VALENTIN, Carolyne Beatriz Simões et al. Investigation of Fe-doped room temperature dilute magnetic ZnO semiconductors. Materials Science in Semiconductor Processing, Amsterdam, v. 96, p. 122-126, 2019. DOI: 10.1016/j.mssp.2019.02.021. Disponível em: https://www.sciencedirect.com/science/article/pii/S1369800118322509. Acesso em: 4 set. 2023.