Investigation of Fe-doped room temperature dilute magnetic ZnO semiconductors

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dc.creatorValentin, Carolyne Beatriz Simões
dc.creatorSilva, Raphael Lucas de Sousa e
dc.creatorBanerjee, Prasun
dc.creatorFranco Júnior, Adolfo
dc.date.accessioned2023-11-01T15:49:27Z
dc.date.available2023-11-01T15:49:27Z
dc.date.issued2019
dc.description.abstractDifferent ceramics sample of Zn Fe 1−x xO (ZFO) series have been sintered by solid state reaction method. Single phase polycrystalline Fe-doped ZnO sample with hexagonal wurtzite structure has been obtained with x < 0.03 mol. Segregation of Fe and/or its oxides have not been found in the XRD patterns. A weak secondary phase of ZnFe O2 4 has been detected with x ⩾ 0.03 mol. Presence of Ohmic conductivity has been detected in the dielectric property analysis and the reasons for this Maxwell-Wagner-Sillars (MWS) relaxation has been explained by the grain boundary barrier defect (GBBD) process. The obtained shift of diamagnetic behavior of pure ZnO samples to para-magnetic for ZFO samples has been established with the defect and impurity structure. The band gap energy for ZFO samples has been calculated between 2.85 eV to 3.15 eV . The results indicate the potential use of Fe doped ZnO ceramics in high frequency device applications.
dc.identifier.citationVALENTIN, Carolyne Beatriz Simões et al. Investigation of Fe-doped room temperature dilute magnetic ZnO semiconductors. Materials Science in Semiconductor Processing, Amsterdam, v. 96, p. 122-126, 2019. DOI: 10.1016/j.mssp.2019.02.021. Disponível em: https://www.sciencedirect.com/science/article/pii/S1369800118322509. Acesso em: 4 set. 2023.
dc.identifier.doi10.1016/j.mssp.2019.02.021
dc.identifier.issn1369-8001
dc.identifier.issne- 1873-4081
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S1369800118322509
dc.language.isoeng
dc.publisher.countryHolanda
dc.publisher.departmentInstituto de Física - IF (RMG)
dc.rightsAcesso Restrito
dc.subjectSpintronics
dc.subjectDilute magnetic semiconductor
dc.subjectOptical property
dc.subjectXRD
dc.subjectDielectric constant
dc.subjectHysteresis loops
dc.titleInvestigation of Fe-doped room temperature dilute magnetic ZnO semiconductors
dc.typeArtigo

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