Éxcitons em semicondutores magnéticos diluídos
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2006-08-02
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Universidade Federal de Goiás
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We investigate the resonant tunneling of electrons and holes in an asymmetric double quantum bit CdTe / CdMnTe in the presence of electric and magnetic fields applied along the growth direction. We show that in this case it is possible to achieve a condition of simultaneous resonant tunneling of electrons and holes with spin set, ie, a resonant tunneling of excitons polarized. Then we calculated the excitonic binding energy as a function of applied fields, showing the strong dependence of the binding energy with the tunneling of carriers. The electronic structure was calculated using the k ~ ~ p multiband Kane model. The eigenstates were obtained by solving numerically the equations ° C ~ the effective mass using the method of inverse power. The effects of lattice strain were treated by the Bir-Pikus model. The energy calculation of excitonic Dial-Up was conducted using the variational method. We consider the perfectly abrupt interfaces of the heterostructures, ie effects of enlargement of the interfaces were neglected.
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ALVES, Erivelton de Oliveira. Excitons in diluted magnetic semiconductors. 2006. 81 f. Dissertação (Mestrado em Ciências Exatas e da Terra) - Universidade Federal de Goiás, Goiânia, 2006.